Deposition and characterization of indium oxide and indium tin oxide semiconducting thin films by reactive thermal deposition technique
Identifieur interne : 000123 ( Main/Exploration ); précédent : 000122; suivant : 000124Deposition and characterization of indium oxide and indium tin oxide semiconducting thin films by reactive thermal deposition technique
Auteurs : RBID : ISTEX:11664_1995_Article_BF02659730.pdfEnglish descriptors
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Abstract
In this paper, the deposition conditions and the characterization properties of the indium oxide (10) and indium tin oxide (ITO) thin films deposited by a reactive thermal deposition technique using the indium, indium-tin alloy sources are reported. The actively involved parameters during deposition have been identified for various substrate temperatures. The effect of oxygen partial pressure in evaporation has been identified. The indium-tin alloy source which was used in this work was prepared by hot zone diffusion technique. The structural, optical, and electrical properties have been characterized using optical microscope, x-ray diffractometer, ultraviolet spectrophotometer, and Hall effect measurement setup. The uniformity of the deposited films and the uniformity of the substrate surface effect on the deposited thin films were analyzed through sheet resistance measurements. The depositions were carried out on glass and quartz substrates. Good optical transmittance (99%) was achieved for 740 nm wavelength and above. The absorbance spectrum exhibit a value of 2% absorbance for IO/quartz structures. Large area (5.0 × 3.8 cm) film with unique optical properties is also reported here.
DOI: 10.1007/BF02659730
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Kumar</name><affiliation wicri:level="1"><mods:affiliation>Crystal Growth Centre, Anna University, 25, Madras, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Crystal Growth Centre, Anna University, 25, Madras</wicri:regionArea><wicri:noRegion>Madras</wicri:noRegion></affiliation></author><author><name>P. Ramasamy</name><affiliation wicri:level="1"><mods:affiliation>Crystal Growth Centre, Anna University, 25, Madras, India</mods:affiliation><country xml:lang="fr">Inde</country><wicri:regionArea>Crystal Growth Centre, Anna University, 25, Madras</wicri:regionArea><wicri:noRegion>Madras</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1995_Article_BF02659730.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF02659730</idno><idno type="wicri:Area/Main/Corpus">000B37</idno><idno type="wicri:Area/Main/Curation">000B37</idno><idno type="wicri:Area/Main/Exploration">000123</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Indium oxide</term><term>Indium-tin alloy</term><term>Indium-tin oxide</term><term>Quartz substrates</term><term>Reactive thermal deposition</term><term>Thin film</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">In this paper, the deposition conditions and the characterization properties of the indium oxide (10) and indium tin oxide (ITO) thin films deposited by a reactive thermal deposition technique using the indium, indium-tin alloy sources are reported. The actively involved parameters during deposition have been identified for various substrate temperatures. The effect of oxygen partial pressure in evaporation has been identified. The indium-tin alloy source which was used in this work was prepared by hot zone diffusion technique. The structural, optical, and electrical properties have been characterized using optical microscope, x-ray diffractometer, ultraviolet spectrophotometer, and Hall effect measurement setup. The uniformity of the deposited films and the uniformity of the substrate surface effect on the deposited thin films were analyzed through sheet resistance measurements. The depositions were carried out on glass and quartz substrates. Good optical transmittance (99%) was achieved for 740 nm wavelength and above. The absorbance spectrum exhibit a value of 2% absorbance for IO/quartz structures. Large area (5.0 × 3.8 cm) film with unique optical properties is also reported here.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="c722c114ca5fde6ee790989cc5388c5add3e8a75"><titleInfo lang="eng"><title>Deposition and characterization of indium oxide and indium tin oxide semiconducting thin films by reactive thermal deposition technique</title></titleInfo><name type="personal"><namePart type="given">P.</namePart><namePart type="family">Thilakan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Crystal Growth Centre, Anna University, 25, Madras, India</affiliation></name><name type="personal"><namePart type="given">S.</namePart><namePart type="family">Kalainathan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Crystal Growth Centre, Anna University, 25, Madras, India</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Kumar</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Crystal Growth Centre, Anna University, 25, Madras, India</affiliation></name><name type="personal"><namePart type="given">P.</namePart><namePart type="family">Ramasamy</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Crystal Growth Centre, Anna University, 25, Madras, India</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, New York</publisher><dateCreated encoding="w3cdtf">1994-09-20</dateCreated><dateValid encoding="w3cdtf">2007-06-23</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">In this paper, the deposition conditions and the characterization properties of the indium oxide (10) and indium tin oxide (ITO) thin films deposited by a reactive thermal deposition technique using the indium, indium-tin alloy sources are reported. The actively involved parameters during deposition have been identified for various substrate temperatures. The effect of oxygen partial pressure in evaporation has been identified. The indium-tin alloy source which was used in this work was prepared by hot zone diffusion technique. The structural, optical, and electrical properties have been characterized using optical microscope, x-ray diffractometer, ultraviolet spectrophotometer, and Hall effect measurement setup. The uniformity of the deposited films and the uniformity of the substrate surface effect on the deposited thin films were analyzed through sheet resistance measurements. The depositions were carried out on glass and quartz substrates. Good optical transmittance (99%) was achieved for 740 nm wavelength and above. The absorbance spectrum exhibit a value of 2% absorbance for IO/quartz structures. Large area (5.0 × 3.8 cm) film with unique optical properties is also reported here.</abstract><subject lang="eng"><genre>Key words</genre><topic>Indium oxide</topic><topic>indium-tin alloy</topic><topic>indium-tin oxide</topic><topic>quartz substrates</topic><topic>reactive thermal deposition</topic><topic>thin film</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>JEM</title></titleInfo><titleInfo><title>Journal of Electronic Materials</title><partNumber>Year: 1995</partNumber><partNumber>Volume: 24</partNumber><partNumber>Number: 6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-06-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Optical and Electronic Materials</topic><topic>Characterization and Evaluation of Materials</topic><topic>Solid State Physics and Spectroscopy</topic><topic>Electronics and Microelectronics, Instrumentation</topic></subject><identifier type="issn">0361-5235</identifier><identifier type="issn">Electronic: 1543-186X</identifier><identifier type="matrixNumber">11664</identifier><identifier type="local">IssueArticleCount: 14</identifier><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02659730</identifier><identifier type="matrixNumber">Art2</identifier><identifier type="local">BF02659730</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>719</start><end>724</end></extent></part><recordInfo><recordOrigin>The Metallurgical of Society of AIME, 1995</recordOrigin><recordIdentifier>11664_1995_Article_BF02659730.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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